capable of 2.5v gate drive bv dss 20v lower gate charge r ds(on) 25m surface mount package i d 6a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w thermal data parameter storage temperature range total power dissipation 1.38 -55 to 150 operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 4.5v 4.8 pulsed drain current 1 24 gate-source voltage + 12 continuous drain current 3 , v gs @ 4.5v 6 parameter rating drain-source voltage 20 AP2324GN-HF g d s d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for all commercial-industrial applications. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v v gs =4.5v, i d =5a - - 25 m v gs =2.5v, i d =2.5a - - 39 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transconductance v ds =5v, i d =5a - 15 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua i gss gate-source leakage v gs = + 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 9 14.4 nc q gs gate-source charge v ds =10v - 1.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time 2 v ds =10v - 8 - ns t r rise time i d =1a - 11 - ns t d(off) turn-off delay time r g =3.3 ? -20- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 600 960 pf c oss output capacitance v ds =20v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v trr reverse recovery time 2 i s =5a, v gs =0v, - 22 - ns qrr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. AP2324GN-HF static drain-source on-resistance 2 r ds(on) product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
